Resumenes
 

SCALING LAWS IN PZT THIN FILMS GROWN ON SI(001)AND NB-DOPED SITIO3(001) SUBSTRATES

J.-G. Ramírez, A. Cortes, W. Lopera, M. E. Gómez, and P.Prieto

Resumen

A dynamic scaling and kinetic roughening study was done on digitized atomic force microscope (AFM) images of Pb(Zr0:52;Ti0:48)O3 (PZT) thin films. The films were grown on Si(001) and Nb¡SrTiO3(001) (STNO) substrates via rf-sputtering technique at high oxygen pressures at substrate temperatures of 600 oC by varying the deposition time and keeping other growth parameters fixed. By using a specific self-designed algorithm, we can extract from digitized 512-pixel resolution AFM-images, quantitative values of roughness parameters, i.e., interface width (s(`)), lateral correlation length (xjj) and, roughness exponent (a). Herein, we report on the sputter-time deposition dependence of the parameters describing roughness for both kinds of substrates. We report a-values for different time depositions (between 15 and 60 minutes) close to 0:55 for Si substrates and 0:63 for Nb¡SrTiO3 substrates, indicating that the surface becomes more correlated in STNO substrates. The a-values are associated to the Lai-Das-Sarma-Villain model.


 
 
 
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