J.C. Martınez-Orozcoa, I. Rodrıguez-Vargas, M.E. Mora-Ramos, C.A. Duque

The study of the electronic structure in GaAs-based delta-doped field effect transistors under applied hydrostatic pressure is presented. A combination of the depletion approximation and the local density Thomas-Fermi theory is used to model the potential energy profile. We present a discussion on the possible effect of the hydrostatic pressure in the formation of high conductivity channels in the system.